One of the most promising approaches to further extend the room-temperature optical response of Si to the short- and mid-wavelength infrared (SWIR, MWIR) range consists of introducing deep-level dopants (e.g., transition metals and chalcogen dopants) into Si at concentrations in excess of the solid solubility limit. Therefore, the development of a room-temperature broadband infrared Si-based photodetector is of great interest in the realm of all-Si photonic systems. Alternatively, Si-based photodetectors overcome these disadvantages, but their infrared photoresponse is fundamentally restricted to the near infrared (NIR) spectral range due to the 1.12-eV indirect bandgap of Si (λ = 1.1 µm). These photodetectors exhibit high device performance in infrared light detection, but suffer from some crucial drawbacks, such as high cost, problematic environmental impact, operation at cryogenic temperatures, and especially incompatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication routes. Nowadays, commercially available photodetectors are mostly fabricated with mercury cadmium telluride (MCT, HgCdTe), PbS, and III-V quantum-well/dot (QWIP/QWID). This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature.īroadband infrared photodetectors have been attracting the interest of many researchers due to their wide variety of applications, such as telecommunication, security equipment, environmental sensing, and biomedicine. The correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 × 10 12 cmHz 1/2 W −1 and 9.2 × 10 8 cmHz 1/2 W −1 at 1 µm and 1.55 µm, respectively, is also investigated. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 µm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0–1.9 µm. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Si-based photodetectors satisfy the criteria of being low-cost and environmentally friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems.
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